The latest silicon carbide product portfolio Coolsic ™ MOSFET 650V series is created with the most advanced groove semiconductor process. The performance is optimized, and the minimum loss and maximum reliability of the application can be achieved. While using the powerful material characteristics of silicon carbide, Yingfei Ling's experts also add some unique features to improve the performance, reliability and ease of use of the device.

Compared the newly launched CoolSIC ™ groove MOSFET 650V product portfolio compared with the existing small alternative products in the market, engineers will find that Yingfei is the best choice for its supplier:

Main features • Low capacitance

• Optimized switch behavior under higher current

• A solid fast body diode, with low reverse recovery charge (QRR)

• Overcurse oxide reliability

• Outstanding thermal conductivity and behavior

• Advanced avalanche and short -circuit capabilities

• Match the standard drive

• 0V off the range of VGS and wide VGS

The value created to users is very simple: the new product portfolio represents a simple (integrated, design introduction, use) and economical and efficient way. It reaches the highest efficiency/density level when people expect the system complexity will increase.

The concept of the above grooves can ensure that the product is optimized and make full use of the strong material characteristics of silicon carbide. Engineers will achieve ultra -high performance through compact and reliable systems. With Yingfei Ling's COOLSIC ™, the technical system requires less components and less magnetic components/heat sinks. Therefore, they become simpler, small, and lower.

Performance is crucial, Coolsic has excellent conduction characteristics and switching efficiency. In addition to performance, the COOLSIC groove -type MOSFET 650V series also has some technical characteristics to distinguish it from competitive products.

Reliability of the grid pole oxide (groove technology can achieve excellent performance without violating the safety conditions of the gate oxide)

Parasitic Direction of Stability

Steady body diodes

Wide VGS range, easy to use

Stability related functions, such as short -circuit capacity and thermal conductivity, suitable for high temperature operations, RDS (on) low temperature dependence